Université de Sherbrooke x Teledyne DALSA x Umicore

The proposed research aims to revolutionize semiconductor technology by developing innovative methods for depositing crystalline materials on different substrates, a process called heteroepitaxy. This project focuses on short-wave infrared (SWIR) sensors and proposes two promising methods: using heat-treated nanoporous regions to 1) facilitate separation and transfer at the wafer scale, or 2) interact with dislocations and stimulate their recombination to prevent their appearance on the surface, thus enabling low-defect epitaxial deposition.

The main objectives of the project are to provide industrial partners with knowledge about the proposed methods, to demonstrate the manufacture of a high-performance SWIR device on a large-diameter substrate, and to facilitate the transfer of manufacturing methods to production environments. A positive outcome would have a significant impact on the semiconductor industry, particularly by integrating heteroepitaxial devices on large wafers such as Si.

Although previous attempts have been made using various techniques, none have combined device performance preservation with a scalable, low-cost process compatible with Si-based fabs. The proposed method using nanoscale nanoporous structures in germanium (Ge) represents a critical step toward the commercialization of fully integrated SWIR devices and the establishment of a supply chain between collaborating companies. The method also offers the possibility of creating a circular economy in the Ge substrate market, including the recycling of materials within the supply chain.